Xiaomin Yan
Email: xyan@ece.neu.edu
Tel: (617) 373 3518 (O), (617) 713 0175 (H)
828 Huntington Ave., Apartment 3
Boston, MA 02115

Objective   Engineering position in semiconductor devices and circuits or MEMS design and development.

Education

Master of Electrical Engineering, Northeastern University, Boston
GPA: 3.88/4.0, Graduation date: May, 2001

Master of Electrical Engineering, Huazhong University of Science and Technology, China
GPA: 3.50/4.0, Graduation date: July, 1998

Experience

Research Assistant, Northeastern University, Boston, MA [September 1998 - present]
Thermal Characterization of MEMS Microswitch Contacts: Established FEA models in ANSYS to analyze electrical and thermal characteristics of MEMS microswitch contacts. Developed programs in Labview to test microswitches. Performed SEM analysis of contacts subjected to high-current testing.

Research Assistant, Huazhong University of Science and Technology [September 1995 - July 1998]
Design and Fabrication of Optical Thin Films.

Skills

Finite Element Analysis using ANSYS
Performed finite element analysis of microswitch thermal-electrical characteristics. Simulate and analyze different geometry of our microswitches. The results will be used to build microswitches with better current handling capability.

Microfabrication
Ran thermal evaporation and sputtering processes for optical thin films. Ran a wet etch release process for microswitches. Performed microswitch failure analysis using SEM.

Labview
Developed LABVIEW programs to characterize microswitches built at Northeastern. LABVIEW programs interfaced with National Instruments DAQ boards and with Keithley source measure units through GPIB.

Matlab
Designed filters for Digital Signal Processing. Wrote routines to analyse and graph microswitch measurement data.

Software packages and languages  SPICE, TSUPREM, MEDICI, C, Fortran.

Course Projects

NMOS Design and Modeling (for Physics of Semiconductors II)
The NMOS half of a CMOS transistor was designed using 0.18m m technology using TSUPREM and MEDICI.

Photodiode Design (for Physics of Semiconductors I)
Designed a photodiode to operate at 1.3m m wavelength with a signal/noise ratio of 5.

Courses

Analog Integrated Circuits          Physics of Semiconductors                  IC Fabrication
Optoelectronics                         Applied Optics                                    Physical Optics
Heat Conduction                       Advanced Mechanics of Materials       Theory of Elasticity
Digital Signal Analysis                Linear System Analysis
VLSI Design                             Computer Architecture                        Computer Hardware Synthesis