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Current Research Project:

Plasma Physics of Metal-Nitride Deposition of Integrated Circuit Barrier Layers using Ionized Physical Vapor Deposition, National Science Foundation. Development of models and verifying experiments to describe TiN deposition into high aspect ratio microstructures using ionized PVD. [PhD Presentation]

Publications:

Presentations:

  • D. Mao, J. Hopwood, K. Tao, "The Influence of High Density Plasma on TiN Films Deposition by Ionized Physical Vapor Deposition ", AVS 47 th International Symposium, Boston, Massachusetts, October 2000. [presentation]

  • K. Tao, D. Mao, J. A. Hopwood, "Modeling and Experimental Verification of a Ti/Nitrogen/Ar Ionized Physical Vapor Deposition Tool", AVS 47 th International Symposium, Boston, Massachusetts, October 2000.

  • K. Tao, D. Mao, J. A. Hopwood, "Modeling and Experimental Characterization of a Ti/Nitrogen/Ar Ionized Physical Vapor Deposition Tool", AVS 46 th International Symposium, Seattle, Washington, October 1999.

  • D. Mao, Q. M. Chen, Jing Hu, "Continuous Wave Near-infrared Atomic Xe Laser Excited by Magnetically Confined discharge", International Conference on LASER'97, New Orleans, Louisiana, December 15-19, 1997.

  • Jing Hu, Q. M. Chen, D. Mao, "Two Fluoride Compounds for IR Thin Films", International Conference on LASER'97, New Orleans, Louisiana, December 15-19, 1997.

  • D. Mao, Q. M. Chen, J. J. Pan, "Electron Dynamic in Magnetically Confined CO Laser Discharges", International Conference on LASER'95, Charleston, Arizona, December 4-8, 1995.

Professional Societies:

Member, American Vacuum Society