Heterogeneous Integration of SWNTs onto CMOS Circuitry
  This paper presents heterogeneous integration of Single-Walled Carbon Nanotubes (SWNTs) with CMOS integrated circuits using die-level post processing. Low temperature dielectrophoretic assembly was utilized for the placement of the SWNTs on to these electrodes. Electrical measurements from the assembled SWNTs yield ohmic behavior with a two-terminal resistance of ~44Kú[. The SWNTs were incorporated on to the CMOS chip as a feedback element of a two-stage Miller compensated high gain operational amplifier. This paper lays the foundation for the realization of next generation integrated nanosystems with active nanostructures on CMOS integrated circuits.