Room 327 DA
360 Huntington Avenue
Boston, Massachusetts 02115
email:
zavracky@neu.edu email:
zavracky@neu.edu Professor Zavracky obtained his Ph.D. in Solid State Physics at Tufts University in 1984 and an MS degree at Northeastern University in 1975. He has extensive experience both in material and device technology. Professor Zavracky holds over 30 patents on material and device fabrication. Dr. Zavracky joined Northeastern University in January of 1991. He has been responsible for initiating a research program aimed at the development of microsensor fabrication techniques. This program specializes in bulk micromachining (accelerometer), silicon on insulator(SOI) sensors, and nickel plated surface micromachined structures (spectrometer and microrelays). Prior to joining Northeastern, Zavracky was the Chief Operating Officer of Kopin Corporation where he managed the operations of the company, and coordinated sales and manufacturing activities for Kopin's Solar, SOI and GaAs products. While at Kopin, he spearheaded drive to establish Kopin's SOI materials capability as a potentially enabling technology for Flat Panel Development in the US.
Between 1980 and 1985, Zavracky established a microsensor program and facility at The Foxboro Company. He helped design and supervise the construction of a 3000 sq ft class 100 clean room facility. His program was aggressively aimed at creating micromechanical structures in silicon, quartz and metals. During this period, Dr. Zavracky developed such diverse devices as silicon resonant hollow beam pressure sensors, quartz double tuning fork force sensors, and silicon piezoresistive pressure sensors. Prior to Foxboro, Zavracky spent five years a Coulter Information Systems were he developed a series of electrophotographic films for use in the copier, lithographic and image storage industries. The work focused on CVD and sputter deposited electrophotographic materials including CdS, CdTe and amorphous Silicon. He also spent 5 years at MIT lincoln Laboractory.
At Northeastern, his group is developing silicon micromachined sensors including accelerometers, pressure sensors and gas sensors. Devices under investigation include a bulk micromachined accelerometer being fabricated under contract from Jet Propulsion Laboratory. This device employs a tunneling tip to enable sensitivity to accelerations as small as 10-8g. A thin single crystalline silicon diaphragm pressure sensor is being fabricated in collaboration with Kopin Corporation and The Foxboro Company. Silicon-on-Insulator wafers are used in the process and promise high temperature smart sensor operations.
SOI is being explored for application in two key areas; 3D electronics and high voltage circuits. Northeastern has had an on-going program with Kopin Corporation to develop three-dimensional circuits. High voltage field effect devices in SOI are being investigated for analog circuit application. In addition, work is underway to develop the components needed for a gas sensing system. Among these are a microspectrometer based on a Fabry Perot interferometer.
SELECTED PUBLICATIONS
P. M. Zavracky, T.Earles and N.l. Pokrovshiy, J.A. Geen and B.E. Burns, "Fabrication of Vertical Sidewalls by Anisotropic Etching of Silicon (100) Wafers," J. Electrochem. Soc., Vol. 141, No. 11, Nov. 1994
P.D. Aquilino and P.M. Zavracky, "Silicon-on-Insulator (SOI) by Zone-Melting-Recrystallization (ZMR) as a Micromechanical Material," Solid-State Sensor and Actuator Workshop, Hilton Head, S.C., June 13-16, 1994.
P.M. Zavracky, K. Warner, I. Lassic, and J. Green, "Piezoresistivity of silicon-on-insultaor films by zone-melting recrystallization," J. Micromech. Microeng. Vol. 3, pp 96-101, 1993.
P.M. Zavracky, F. Hartley, N. Sherman, T. Hansen, and K. Warner, "A New Force Balanced Accelerometer using Tunneling Tip Position Sensing," 7th Int. Conf. on Sensors and Actuators, Yokahama, Japan, June 7-10, 1993.
B.D. Dingle, M.B. Spitzer, R.W. McClelland, J. C.C. Fan, and P.M. Zavracky, "Monolithic integration of a light-emitting diode array and a silicon circuit using transfer processes," Appl. Phys. Lett. 62 (22), 31 May 1993.
D.-P. Vu, P.M. Zavracky, M.J. Boden, and N.K. Cheong, "A simple electrical method to determine the Si and oxide thicknesses in SOI materials," IEEE Electron Device Letters 12(8), p427 (1991).
E.P. Kvam, J. Washburn, L.P. Allen, and P.M. Zavracky, "Materials Study of Silicon-on-Insulator Material by TEM," Journal of Electronic Materials, Vol. 20, No. 2, 1991.
Paul M. Zavracky, Duy-Pach Vu, and Michael Batty, "Silicon-on-Insulator Wafers by Zone-Melting-Recrystallization," Solid State Technology, p55, April 1991.
P.Y. Young, I.N. Miaoulis, and P.M. Zavracky, "Microscale Heat Transfer Phenomena in Multilayer Thin Film Processing with a Radiant Heat Source," The Winter Annual Meeting of the ASME, Dallas, Texas, November 25-30, 1990.
P.Y. Young, I.N. Miaoulis, and P. Zavracky, "Optical Effects induced by the Multilayer Nature of SOI Films during Transient Thermal Processing with a Radiant Line Heat Source," MRS. Fall 1990 Meeting, Boston, Ma., Symposium A, Vol. 201, 1990.
L.T.P. Allen, M.W. Batty, W.R. Henderson, T.E. Jersey, D.P. Vu, P.M. Zavracky, J. Narayan, "Characterization of Isolated Silicon Epitaxy Material," SPIE Vol. 945, Advanced Processing of Semiconductor Devices II(1988).
A.R. Svivastra, J. Narayan, and P.M. Zavracky, "Defects and Interfaces in Zone Melt Recrystallized Silicon," SPIE Vol. 945 Advanced Processing of Semiconductor Devices II (1988).
M. B. Spitzer, J. E. Dingle, R. P. Gale, P. Zavracky, and M. Boden, "Gallium Arsenide Concentrator Solar Cells with Highly Stable Metallization," 20th IEEE Photovoltaic Specialists Conference, Las Vegas, Sept 1988.
L.T.P. Allen, D.P. Vu, P.M. Zavracky, W.R. Henderson, T. Jersey, J.C.C. Fan, J. Narayan, "Characterization of Defects in Zone Melt Recrystallized SOI Material," Proceedings of the International Society of Optical Engineering, March 1988.
L.T.P. Allen, M.W. Batty, W.R. Henderson, T.E. Jersey, J. Narayan, D.P. Vu and P.M. Zavracky, "Characterization of Isolated Silicon Epitaxy Material," SPIE Vol 945 Advanced Processing of Semiconductor Devices II (1988).
R.P. Gale, P.M. Zavracky, R.W. McClelland, and J.C.C. Fan, "GaAs/AlGaAs Heterostructure Point Contact Concentrator Cells," Proceedings of the 1987 IEEE Photovoltaics Specialists Conference.
P.M. Zavracky, D.P. Vu, L.T.P. Allen, W. Henderson, H. Guckel, J.J. Sniegowski, T.P. Ford and J.C.C. Fan, "Large Diameter SOI Wafers by Zone-Melting-Recrystallization," Fall 1987 MRS Society Symposia Proceedings.
Maria J. Anc, Paul M. Zavracky, "Design Consideration for Piezoresistive Pressure Sensors," Wescon Conference Record 1985.
P. M. Zavracky, "Piezoelectrically Driven Resonant Ribbons," Third International Conf. on Solid State Sensors and Actuators - Transducers '85, June 11-14, 1985, Philadelphia.
P. M. Zavracky and R. H. Morrison, "Electrically Actuated Micromechanical Switches with Hysterisis," Technical Digest IEEE Solid State Sensor Conf., Hilton Head Island, S.C., June 6-8, 1984.
W. Brouwer, E. O'Neill, and P. Zavracky, "Some Factors Limiting Bit Capacity in Photography," Photographic Science and Engineering, Vol. 23, No. 6, pp. 383-389, Nov/Dec 1979.
J. C. C. Fan, H. R. Fetterman, F. J. Bachner, P. M. Zavracky and C. D. Parker, "Thin-Film VO2 Submillimeter-Wave Modulators and Polarizers," Applied Physics Letters, Vol. 31, No. 1, pp. 11-13, 1 July 1977.
John C. C. Fan, Herbert J. Zeiger, Paul M. Zavracky, "Preparation of Polycrystalline Silicon Thin Films by Laser Crystallization," Proc Natl Workshop Low Cost Polycrystalline Silicon Sol. Cells; PB-266 563, pp. 89-104 (1976).
J.C.C. Fan and P.M. Zavracky, "Selective Black Absorbers using MgO/Au Cermet Films," Applied Physics Letters, Vol 29, No. 8, pp. 478-480,15 October 1976.
John .C.C. Fan, Frank Bachner, George H. Foley, and Paul M. Zavracky, "Transparent heat-mirror films of TiO2/Ag/TiO2 for solar energy collection and radiation insulation," Applied Physics Letters, Vol 25, No. 12, 15 December 1974
"Single Crystal Silicon Arrayed Devices for Display Panels," P. Zavracky, J. Fan, R. McClelland, B. Dingle, and J. Jacobsen, issued November 8, 1994, US Patent #5,362,671
"Method of Producing Sheets of Crystalline Material and Devices Made Therefrom," Carl Bosler, J. Fan, R. McClelland, issued November 8, 1994, US Patent #5,362,682
"A Slide Assembly for Projectior with Active Matrix Moveably Mounted to Housing," M. B. Spitzer, J. P. Salerno, and P. M. Zavracky, issued May 31, 1994, US Patent #5,317,436.
"Single Crystal Silcion Arrayed Devices for Display Panels," P. Zavracky, et al., issued May 31, 1994, US Patent #5,317,236.
"Single Crystal Silicon Arrayed Devices for Display Panels," P. Zavracky, et al., issued April 27, 1993, US Patent #5,206,749.
"Improved SOI Diaphragm Sensor," P. Zavracky and R. Morrison, issued January 5, 1993, US Patent 5,177,661.
"Method and Apparatus for Reducing Defects in SOI Structures," P. Zavracky, T. Ford and L. Allen, issued June 9, 1992, US Patent #5,120,509.
" High Temperature Photovoltaic system," J. Fan and P. Zavracky, issued May 26, 1992, US Patent #5,116,427.
"Improved SOI Diaphragm Sensor," P. Zavracky, issued March 10, 1992, US Patent #5,095,401.
"Improved Zone-Melt-Recrystallization Method and Apparatus," P. Zavracky and J. Salerno, issued December 24, 1991, US Patent #5,074,952.
"Improved Zone-Melt-Recrystallization Apparatus," P. Zavracky and K. O'Conner, issued July 23, 1991, US Patent #5,034,199.
"Monolithic Integrated Transceivers of III-V devices on Silicon," Paul M. Zavracky, M. Zavracky, J. Fan, and J. Salerno, issued February 5, 1991, U.S. No. 4,989,934.
"Zone-Melting Recrystallization Process", John C. C. Fan, Paul M. Zavracky, Jagdish Narayan, Lisa Allen, and Duy-Phach Vu, issued June 4, 1991, #5,021,119.
"Seeding Process in Zone Recrystallization," L. Allen, D.P. Vu, M. Batty, R. Morrison and P. Zavracky, issued July 31, 1990, US Patent #4,944,835.
"Monolithic Integrated III-V Type Laser Devices and Silicon Devices on Silicon," P. Zavracky, issued July 10, 1990, U.S. Patent No. 4,940,672.
"Optoelectronic Interconnection for III-V Devices on Silicon," Paul M. Zavracky, Matthew M. Zavracky, John C.C. Fan and Jack P. Salerno, issued January 2, 1990, U.S. No. 4,890,895.
"Zone Melting Recrystallization Process," J. Fan, P. Zavracky, J. Narayan, L. Allen and D.P. Vu, issued December 5, 1989, US Patent #4,885,052.
"High Temperature Photovoltaic System," J. Fan and P. Zavracky, issued December 26, 1989, US Patent #4,899,565.
"Resonant Sensor and Method of Making Same", Gordon W. Chitty, Richard H. Morrison, Jr., Everett O.Olsen, John G. Panagou, and P. M. Zavracky, filed June 11,1985, issued Aug. 16,1988, U.S. No. 4,764,244.
"Micromechanical Electrical Shunt", Paul M. Zavracky, filed February 6, 1987, serial #012-092 not yet issued.
"Resonant Hollow Beam and Method", Paul M. Zavracky, Richard Morrison and Steven Senturia, filed March 8, 1985, issued September 30, 1986 U.S. No. 4,614,119
"Micro-Mechanical Electrical Shunt and Coding Devices made Therefrom", Paul M. Zavracky and Richard Morrison, filed May 1, 1984, issued June 23, 1987, U.S. No. 4,674,180.