EECE 7201, Solid State Devices

Spring 2010, Tuesday and Friday 9:50-11:30, Room 178F West Village

Nick McGruer

Office: 326 Dana
Phone: (617) 373-2066
FAX: (617) 373-8970
Office Hours: Monday and Thursday 11-12, or phone/FAX/e-mail/stop by any time.


Turn-in procedures for homework: Best is fax at 617-373-8970 or upload to Blackboard, whatever is easiest for you. On the faxes, please make sure that your name, my name, assignment, and course # are all on the front page. E-mail of one moderate-size file is ok as a second choice - make sure to include the same information on the first page.


Homework #1, Due Jan. 16, 2009   Notes: The solution for problem 5 is 1000 times too large. 1 microgram is 1e-9 kg. On page 8, Example 1.1, the number used for the permittivity of vacuum is incorrect in the second line of the solution. It is shown as 9.85e-12 F/m, when it should be 8.85e-12 F/m. (Thanks Mark)

Course Materials:

1/12, McGruer Research Introduction
1/12, Bin Yu talk (look at first few slides)
1/12, Semiconductor and pn junction review.
1/15, BJT review.
1/15, MOSFET review.


To appear!

OVERVIEW: The primary goals of this course are to develop the semiconductor theory necessary to understand and work with a wide range of solid state devices and to understand in detail operation of diodes, bipolar transistors, and MOS transistors. A background in semiconductor physics and devices is not required, but the material will be covered at a graduate level. The first third of the course will develop the fundamental semiconductor theory required to understand the operation of modern semiconductor devices. The second two thirds of the course will apply the theory to the p-n junction diode, the bipolar junction transistor, and the MOSFET, with a brief look at photonic devices.

Text: Fundamentals of Semiconductor Devices, Anderson and Anderson.

1. Advanced Semiconductor Fundamentals, Robert F. Pierret (Volume VI, Modular Series on Solid State Devices) Addison-Wesley. (Easy to read, clear, complete treatment of Part 1 of this class.)
2. Physics of Semiconductor Devices, Sze. Wiley-Interscience, 1981. (The standard device reference for many years.)
3. Semiconductor Device Fundamentals, Pierret. Addison Wesley, 1996. (Easy to read, clear treatment of the subject.)
4. Solid State Physics for Engineering and Materials Science, McKelvey. Krieger, 1993. (More accessible than Ashcroft/Mermin.)
5. Solid State Physics, Ashcroft/Mermin. Holt, Reinhart and Winston, 1976. (Solid state physics viewpoint.)

Prerequisites: Graduate standing, or permission of the instructor.

Grading: Homework - 30%, Midterm 30%, Final 40%

Week Subjects Text Reference
Part 1  
1/11 Overview, Electrons, Quantum Mechanics, Crystal Structure. Chapter 1, Supplement 1A
1/18 Quantum Mechanics Supplement 1A, Chapter 2
1/25 Homogeneous Semiconducors, Density of States, Distribution Functions Appendix D, Supplement 1B.2
2/1 Dopants, Equilibrium Carrier Concentrations, Current Flow Chapter 2, Chapter 3
2/8 Mobility, Phonons, Recombination-Generation Chapter 3, Supplement 1B.4
2/15 Continuity Equations, Minority Carriers, Non-Homogeneous Semi. Chapter 3, Chapter 4
Part 2  
2/22 p-n Junction Diode Chapter 5

Spring Break!

Chapter 5, Chapter 6
3/8 Breadkdown, Transient Response, Metal-Semi. Junctions, Midterm Exam 2/27
Part 5  
3/15 LED, Laser, Photodetectors, Solar Cell Chapter 11
Part 3  
3/22 MOSFET Chapter 7, Supplement 3.3
3/29 MOSFET Chapter 8, Supplement 3.3
4/5 FET Advanced Concepts Chapter 8
Part 4  
4/12 Bipolar Junction Transistor, HBT Chapter 9, 10, Suppl. 4.2, 4.3

Review, Final Exam 4/23

Note: May add class so that review can be held week of 4/12
and final can be held week of 4/26 (finals week).


Academic Honesty: There is no restriction on discussions, use of texts, or use of library materials while learning how to do any assignment. If a solution to a problem is found in the literature, students are expected to provide correct citations to that literature. For the individual homework assignments, every student is expected, at the end, to have worked through their own analysis or modeling work and to have written up their own work for submission. Under no circumstances is it permitted to present another student's work as one’s own, nor is it permissable to copy computer code. In the case of improper collaboration, penalties may be assessed to both or all students involved. Plagiarism and cheating will not be tolerated; they will be dealt with under the policies described in the student handbook.