ECE G201, Solid State Devices
Spring 2009, Tuesday and Friday 9:50-11:30, Room 262F West
Village
http://www.ece.neu.edu/edsnu/mcgruer/class/eceg201
Nick McGruer
Office: 326 Dana
Phone: (617) 373-2066
FAX: (617) 373-8970
E-mail: mcgruer@ece.neu.edu
http://www.ece.neu.edu/edsnu/mcgruer/mcgruer.html
Office Hours: Monday and Thursday 9:15-10:30, or phone/FAX/e-mail/stop by
any time.
Announcements:
Turn-in procedures
for homework: Best is fax at 617-373-8970
or upload to Blackboard, whatever is easiest for you. On the faxes, please make sure that your name, my name, assignment, and course # are all on the front page. E-mail of one moderate-size
file is ok as a second choice - make sure to include the same information on the first page.
Homework:
Homework
#1, Due Jan. 16, 2009 Notes: The solution for problem 5 is 1000 times too large. 1 microgram is 1e-9 kg. On page 8, Example 1.1, the number used for the permittivity of vacuum is incorrect in the second line of the solution. It is shown as 9.85e-12 F/m, when it should be 8.85e-12 F/m. (Thanks Mark)
Homework #2, Due Jan. 30, 2009
Homework #3, Due Feb. 10, 2009
Homework #4, Due Feb. 17, 2009
Homework #5, Due Feb. 24, 2009
Homework #6, Due Mar. 17, 2009 HW#6 Data File
Homework #7, Due Mar. 24, 2009
Homework #8, Due Mar. 31, 2009Note that for problem 4, part a, phi ms is wrong, because the doping in the example in the text is different.
Homework #9, Due April 7, 2009, Paper
#1, Paper
#2, ITRS 2007Note: In problem 3, the maximum VDS is 1V (not Vdd=1V, although that is the way it appears in the ITRS). Note that in 5g, the information on why this would work is not explicitely in the text.
Homework #10, Due April 14, 2009 Note: In problem 8 (S4.2), you are asked to adapt Eq. 9.4.2 to include the bandgaps. It is useful to go back to the (unnumbered) equation just above 9.4.2, and think about the minority carrier concentration. Also, since HBTs are usually made of closely related semiconductors, assume that Nc and Nv are constant.
Course Materials:
1/6, McGruer
Research Introduction
1/6, Bin Yu talk
(look at first few slides)
1/6,
Semiconductor and pn junction review.
1/9, BJT review.
1/9, MOSFET review.
Breakdown Figures from Sze: 9, 26, 29, 35
PSPICE for HW6
Notes:
1/13,
Introduction to Electrons in Solids
1/13, Introduction
to Electrons in Solids 2
1/16, Tunneling
1/20, Crystals
1/23, Electrons in Crystals
1/23, Quasi-Free Electrons and
Effective Mass
1/27, Phonons
1/27, Density of States
1/30, Homogeneous Semiconductors
2/3, Current, Recombination, Continuity Equations
2/6, Non-Homogeneous Semiconductors, p-n Junction Diode #1
2/10,
Basic Diode I-V Characteristics
Sample Midterm from 2008
2/13, Advanced Diode I-V Characteristics
2/17, Heterojunctions
2/17, Nanotubes as an Electronic Material
2/24, Solar Cells
3/10, Solar Cells 2
MOSFET Introduction, Chapter 7
MOSFET Vt and I-V, Chapter 7 and S3
MOSFET Vt and I-V, Chapter 7 and S3, Continued
MOSFET Chapter 7, 8, and S3 MOS Continued
MESFET, JFET
MOSFET Scaling
ITRS Technology
Moore's Law
ITRS Process Integration Devices and Structures
ITRS Research Devices
ITRS Materials
Intel High-K
Intel Emerging Technology
BJT #1
BJT#2, Ch. 8 and Supplement 4
BJT#3
Review
Sample Final Solutions Note: In Eq. 9.39, deltaEg* is implicitly taken as a positive number (even though the band gap decreases). In Eq. 9.40, if the change in the emitter bandgap is greater than the change in the base bandgap, the factor exp(deltaEgBE*) must be greater than one. So, there is or is not a sign error in Eq. 9.41, depending on how you think about the signs, but in any case there is an inconsistent treatment of the sign between Eq. 9.39 and Eq. 9.41. The solution to the sample final uses the correct sign.
OVERVIEW: The primary goals of this course are to develop the semiconductor theory necessary to understand and work with a wide range of solid state devices and to understand in detail operation of diodes, bipolar transistors, and MOS transistors. A background in semiconductor physics and devices is not required, but the material will be covered at a graduate level. The first third of the course will develop the fundamental semiconductor theory required to understand the operation of modern semiconductor devices. The second two thirds of the course will apply the theory to the p-n junction diode, the bipolar junction transistor, and the MOSFET, with a brief look at photonic devices.
Text: Fundamentals of Semiconductor Devices,
Anderson and Anderson.
References:
1. Advanced Semiconductor Fundamentals, Robert F. Pierret
(Volume VI, Modular Series on Solid State Devices) Addison-Wesley. (Easy
to read, clear, complete treatment of Part 1 of this class.)
2. Physics of Semiconductor Devices, Sze. Wiley-Interscience, 1981. (The
standard device reference for many years.)
3. Semiconductor Device Fundamentals, Pierret. Addison Wesley, 1996. (Easy
to read, clear treatment of the subject.)
4. Solid State Physics for Engineering and Materials Science, McKelvey. Krieger,
1993. (More accessible than Ashcroft/Mermin.)
5. Solid State Physics, Ashcroft/Mermin. Holt, Reinhart and Winston, 1976.
(Solid state physics viewpoint.)
Prerequisites: Graduate standing, or permission of the instructor.
Grading: Homework - 30%, Midterm 30%, Final 40%
| Week | Subjects | Text Reference |
| Part 1 | ||
| 1/5 | Overview, Electrons, Quantum Mechanics, Crystal Structure. | Chapter 1, Supplement 1A |
| 1/12 | Quantum Mechanics | Supplement 1A, Chapter 2 |
| 1/19 | Homogeneous Semiconducors, Density of States, Distribution Functions | Appendix D, Supplement 1B.2 |
| 1/26 | Dopants, Equilibrium Carrier Concentrations, Current Flow | Chapter 2, Chapter 3 |
| 2/2 | Mobility, Phonons, Recombination-Generation | Chapter 3, Supplement 1B.4 |
| 2/9 | Continuity Equations, Minority Carriers, Non-Homogeneous Semi. | Chapter 3, Chapter 4 |
| Part 2 | ||
| 2/16 | p-n Junction Diode | Chapter 5 |
| 2/23 |
Breadkdown, Transient Response, Metal-Semi. Junctions, Midterm Exam 2/27 |
Chapter 5, Chapter 6 |
| 3/1 | Spring Break! | |
| Part 5 | ||
| 3/8 | LED, Laser, Photodetectors, Solar Cell | Chapter 11 |
| Part 3 | ||
| 3/15 | MOSFET | Chapter 7, Supplement 3.3 |
| 3/22 | MOSFET | Chapter 8, Supplement 3.3 |
| 3/29 | FET Advanced Concepts | Chapter 8 |
| Part 4 | ||
| 4/5 | Bipolar Junction Transistor | Chapter 9 |
| 4/12 | Bipolar Junction Transistor, HBT, Final Exam 4/17 | Chapter 10, Suppl. 4.2, 4.3 |
Academic Honesty: There is no restriction on discussions, use of texts, or use of library materials while learning how to do any assignment. If a solution to a problem is found in the literature, students are expected to provide correct citations to that literature. For the individual homework assignments, every student is expected, at the end, to have worked through their own analysis or modeling work and to have written up their own work for submission. Under no circumstances is it permitted to present another student's work as one’s own, nor is it permissable to copy computer code. In the case of improper collaboration, penalties may be assessed to both or all students involved. Plagiarism and cheating will not be tolerated; they will be dealt with under the policies described in the student handbook.
