ECE 3384 Characteristics and Models of Solid State Devices I

Office Hours: M,W 9:30-10:30, or by appointment, or phone 617-373-2066,
or FAX 617-373-8970 or mcgruer@ece.neu.edu.

Prof. McGruer |Syllabus

Homework 1 |

Homework 2 |

Homework 3 |

Homework 4 |

Homework 5 |

Review Problems |
 
 


Announcements


Review Problem!

Problem 3a.  np-np0=0 at the depletion edge.
 
 

Homework #5 (short) will be the last one!  Due 3/10/99

Homework #5 corrections:      In problem 3, "the voltage at which pn at ..."
                                                In problem 2, the junction depth is 0.5 microns!  The lightly doped silicon layer is 21 microns!
                                                In problem 4, use the diode from problem 2.
                                                In problem 1, x=0 corresponds to the surface of the wafer.  x increases into the wafer.  The junction
                                                    is at some x.
 
 

The final will be Monday 3/15/99, 107 RB, 1:30.  The format will be similar to that of the midterm.