$ Full process EXAMPLE, all process parameters must be set!!! $ Initialize 1D grid...lines at x=0 and x=1 um are the default; $ gridlines are from y=0 to y=2 um with a spacing of 0.01 um $ Dollar signs indicate comments. LINE Y LOC=0 SPAC=0.01 LINE Y LOC=2.5 SPAC=0.01 $ Tracks defects for modelling of oxidation enhanced diffusion $ and defect enhanced diffusion. This makes a fairly big difference $ in the results. Method TWO.DIM $ sets-up a <100> n-type Si wafer with uniform phosphorus doping $ then asks for a printout of the "grid" Initialize <100> phosphorus=1E15 LINE.DAT $ Implant Phosphorus $ The dose is in units of cm-2. $ The energy is in units of keV. $ pearson refers to the Pearson IV distribution, which is $ usually more accurate than the gaussian distribution for implants. Implant phosphorus dose=3E12 energy=100 pearson $ Grow the field oxide Diffusion Time=20 Temperature=1100 WETO2 $ prints existing layers (gives oxide thickness on screen) Select Z=1.0 Print layers x.v=0 $ Etches away all the oxide (if not commented out!!!) Etch oxide all $ Grow the gate oxide Diffusion Time=20 Temperature=1050 DRYO2 $ prints existing layers Select Z=1.0 Print layers x.v=0 $ Deposit polysilicon (if not commented out!!!) $ Deposit Polysilicon thickness=0.5 $ Active area implant Implant BF2 dose=1E15 energy=50 pearson $ Perform the activation/anneal/drive-in diffusion Diffusion Time=15 Temperature=1050 WETO2 $ selects the variable to be plotted and the label for the graph Select Z=log10(Boron) label=LOG(Concentration) $ plots "Z" using a dashed line at x=0 um Plot.1d x.value=0 line.typ=1 top=19.5 bottom=14.5 $ selects the variable to be plotted and the label for the graph Select Z=log10(Phosphorus) label=LOG(Concentration) $ plots "Z" using a dashed line at x=0 um Plot.1d x.value=0 line.typ=3 ^AXES ^CLEAR color=3 $ prints existing layers Select Z=1.0 Print layers x.v=0 Stop End example