ECE 1406, Integrated Circuit Fabrication
Department of Electrical and Computer Engineering
Northeastern University
Spring 2003, M, Tu 2:50-3:55, 11 SL*
Lab meets in 448 Egan
, Schedule Below
*2 classroom meetings/week

Prof. Nick McGruer, mcgruer@ece.neu.edu
http://www.ece.neu.edu/edsnu/mcgruer/mcgruer.html/
Phone: 617-373-2066, FAX: 617-373-8970
Office hours: McGruer, 326 DA: 10-11, Monday, 9:30-10:30 Friday, or call, e-mail, or stop by.
Patricia Nieva: 12:30-1:30 Tuesday, 325 DA, pnieva@ece.neu.edu, 617-373-3518.
Fengchun Li: Wednesday 11-12, 325 DA, fcli@coe.neu.edu, 617-373-3518.

Current announcements:

Grades to date.

Final Project tips:

Question 10, Labs 7/8, diode breakdown: Look up the breakdown voltage on the chart from Sze. Note that the junction can be either planar, cylindrical or spherical. If the mask is retangular, the critical portion of the junction (at the corner) is spherical. If the mask is circular, the edge of the junction is nearly cylindrical. Our process cannot make truely planar junctions! The radius of the junction is approximately equal to the junction depth.

Breakdown Voltage from Sze.

Background concentration: We really have two background concentrations! One is the initial wafer doping, determined from your very first sheet resistance measurement the first week combined with the wafer thickness information (375 microns) and the resistivity information below (Resistiviy vs impurity concentration from Sze.), or from the wafer spec. (1-10 Ohm-cm). The second background concentration is the concentration of phosphorus in the wafer after the initial implant (the one before you recieved the wafers) and the diffusions. You have no way of measuring this, and must take it from your SUPREM simulation (at the end of the process). This second background concentration is the one is used in determining junction depth and breakdown voltage.

Page 36, question 2, the last sentence should say that the measured resistivity is two or more times greater than the bulk aluminum resistivity (this is because of additional electron scattering in thin films of aluminum).

For lab #5, each division on the measuring eyepiece for the junction depth microscope corresponds to 10 microns.

An equation for junction depth in terms of the measurements is given in the text in 4.8.1.

The radius of the grooving cylinder is 19050 microns.

Syllabus
Lab Sections

Implant information

MFL Web Site
Suprem 4 Instructions
Some Basic Unix Commands
Resistivity vs impurity concentration from Sze. (For lab report and future questions on Diffusion)

March 24   Introduction to IC Fab slides:   .ppt   .pdf
March 31 Homework #1

 

April 7 Homework #2  
April 14 Homework #3 ASML 193 nm stepper, SIA Roadmap 2001, EUV Tool,
April 21 Homework #4  
April 28 Suprem Project 1, Homework #5  
May 5 Homework #6  
May 12    
May 19

Homework #7

Final Project

 
May 26    
June 2    

We will be using SUPREM IV for process modelling this quarter. All ECE1406 students who need COE accounts should request them online at http://www.coe.neu.edu/computer/

If he/she is properly registered, the student will get a username and password immediately. The request will be logged and the account will be created the next business day.

Lab 1, Inspecting wafers after oxidation.