$Title       LOCOS oxidation and implant in 2D (in tsuprem4)

$Comment     Initialize 2D grid
LINE X      LOC=0   SPAC=0.1
LINE X      LOC=1   SPAC=0.03
LINE X      LOC=2   SPAC=0.1
LINE X      LOC=3   SPAC=0.03
LINE X      LOC=4   SPAC=0.1
LINE Y      LOC=0   SPAC=0.01
LINE Y      LOC=0.5 SPAC=0.1
LINE Y      LOC=1   SPAC=0.2    

Initialize  <100> BORON=1E16

$pad oxide growth
DIFFUSION   TIME=20 TEMP=1000 DRYO2

$nitride deposition of 0.2um with 4 grid spaces inserted
DEPOSITION  NITRIDE THICKNESS=0.2 SPACES=4

$form a pad of SiNx from x=1um to x=2um by etching 
ETCH        NITRIDE RIGHT P1.X=3.0
ETCH        NITRIDE LEFT  P1.X=1.0

PLOT.2D     GRID C.GRID=2
$stop  


$grow locos (LOCal Oxidation of Silicon) using nitride mask
DIFFUSION    TIME=60 TEMP=1100 WETO2
DIFFUSION    TIME=10 TEMP=1100 NITROGEN

PLOT.2D      GRID C.GRID=2
$stop$

$plot contours of P concentration
$SELECT       Z=LOG10(phos) TITLE="CONTOURS OF PHOS. CONC."
$PLOT.2D      SCALE Y.MAX=1
$FOREACH      X (13, 14, 15, 16, 17)
$   CONTOUR VAL=X
$END

ETCH          NITRIDE
IMPLANT       ARSENIC ENERGY=60 DOSE=5E15 TILT=7
$implants As at an energy of 60keV to a dose of 5e15 cm-2 with a 7degree tilt
$NOTE:  this is not a realistic step in the CMOS process - demonstration only!

$now, activate the implant:  interstials --> substitutional dopants
DIFFUSION     TIME=30 TEMP=550 INERT
DIFFUSION     TIME=10 TEMP=1000 INERT 

$plot contours of AS concentration
SELECT       Z=LOG10(ARSENIC) TITLE="CONTOURS OF ARSENIC CONC."
PLOT.2D      SCALE Y.MAX=1
FOREACH      X (16, 17, 18, 19, 20)
   CONTOUR VAL=X
END
STOP

SELECT       Z=LOG10(ARSENIC)
PLOT.1D      X.V=2


Stop        End example 5