$Title:  Simulation of Example 4.2 in Campbell using TSUPREM4
LINE Y             LOC=0           SPAC=.004
LINE Y             LOC=0.5         SPAC=.01

 
INITIALIZE <100> BORON=1e17 LINE.DAT

$COMMENT  "PUSH WAFERS" i.e. move them gradually into the idling furnace
$          (T=800C, nitrogen only) over a period of 30 minutes.
DIFFUSION  TIME=30 TEMP=27 NITROGEN T.RATE=25.77
$          NOTE: 27C + 30*25.77 = 800C...the final temp of the wafers

$COMMENT   Ramp the furnace to 1000C in 10 minutes with 10% oxygen
DIFFUSION  TIME=10 TEMP=800 T.RATE=20 F.N2=1.8 F.O2=0.2
$          NOTE: F.HCL, F.H2O, F.H2 are the other valid gas flows


SELECT     Z=1.0
PRINT.1D   LAYERS X.V=0
$          Prints the thicknesses of the layers

$COMMENT   oxidize the wafer for 30 minutes at 1000 C in a mixture of
$          oxygen and 3% HCl
DIFFUSION  TIME=30 TEMP=1000 DRYO2 HCL=3.0
$          could also use STEAM, WETO2, INERT in place of DRYO2

$COMMENT   anneal the wafers for 10 minutes at 1000 C in nitrogen
DIFFUSION  TIME=10 TEMP=1000 NITROGEN

$COMMENT   Ramp the furnace back to 800C over 10 min.
DIFFUSION  TIME=10 TEMP=1000 T.RATE=-20 NITROGEN

$COMMENT   "Pull" the wafers from the furnace
DIFFUSION   TIME=30 TEMP=800 T.RATE=-25.77 NITROGEN

PRINT.1D   LAYERS
SELECT     Z=LOG10(BORON)
PLOT.1D    X.V=0 LINE.TYP=1

STOP