Problems from Chapter 4:

1)  Problem 1.

2)  Problem 2

3)  Problem 3

4)  Problem 4

5)  Problem 6...see equation (4.12) and assume that h_g>>k_s.
     Some research has been aimed at using plasmas to oxidize silicon.  Problem 5 suggests that the oxide growth rate may be enhanced by
     creating an environment of O₂^- using an oxygen plasma source.  Actually the true goal of the plasma oxidation is to grow a reasonably thick oxide
     at or near room temperature such that dopant redistribution is essentially eliminated

6)  Calculate the time it would take (in years!) to grow a 0.1 um thick SiO₂ layer at room temperature in air (~23% oxygen, 77% nitrogen). (Hint: extrapolate Figs. 4.2 and 4.3 down to room temperature.)

7)  Problem 14 (note that the tsuprem4 file for Example 4.2 is available from the ece3626 homepage)